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Wide Bandgap Semiconductor Based Micro/Nano Devices

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ISBN: 9783038978428 / 9783038978435 Year: Pages: 138 DOI: 10.3390/books978-3-03897-843-5 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering --- Electrical and Nuclear Engineering
Added to DOAB on : 2019-08-28 11:21:27
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Abstract

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.

Keywords

optical band gap --- tungsten trioxide film --- annealing temperature --- electrochromism --- AlGaN/GaN HEMT --- DIBL effect --- channel length modulation --- power amplifier --- W band --- high electron mobility transistors --- high electron mobility transistor (HEMT) --- AlGaN/GaN --- ohmic contact --- regrown contact --- ammonothermal GaN --- power amplifier --- I–V kink effect --- AlGaN/GaN HEMT --- large signal performance --- 4H-SiC --- MESFET --- ultrahigh upper gate height --- power added efficiency --- harsh environment --- space application --- 1T DRAM --- wide-bandgap semiconductor --- high-temperature operation --- TCAD --- amorphous InGaZnO (a-IGZO) --- thin-film transistor (TFT) --- positive gate bias stress (PGBS) --- passivation layer --- characteristic length --- edge termination --- silicon carbide (SiC) --- junction termination extension (JTE) --- breakdown voltage (BV) --- Ku-band --- GaN high electron mobility transistor (HEMT) --- power amplifier --- asymmetric power combining --- amplitude balance --- phase balance --- micron-sized patterned sapphire substrate --- growth of GaN --- sidewall GaN --- flip-chip light-emitting diodes --- distributed Bragg reflector --- light output power --- external quantum efficiency --- threshold voltage (Vth) stability --- gallium nitride (GaN) --- high electron mobility transistors (HEMTs) --- analytical model --- high-temperature operation --- T-anode --- GaN --- buffer layer --- anode field plate (AFP) --- cathode field plate (CFP) --- n/a

Radiation Tolerant Electronics

Author:
ISBN: 9783039212798 / 9783039212804 Year: Pages: 210 DOI: 10.3390/books978-3-03921-280-4 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering --- Electrical and Nuclear Engineering
Added to DOAB on : 2019-12-09 11:49:15
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Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.

Keywords

physical unclonable function --- FPGA --- total ionizing dose --- Co-60 gamma radiation --- ring-oscillator --- Image processing --- line buffer --- SRAM-based FPGA --- single event upset (SEU) --- configuration memory --- soft error --- radiation-hardened --- instrumentation amplifier --- sensor readout IC --- total ionizing dose --- nuclear fusion --- radiation hardening --- hardening by design --- TMR --- selective hardening --- VHDL --- FPGA --- radiation hardening --- single event upsets --- heavy ions --- error rates --- single-event upsets (SEUs) --- digital integrated circuits --- triple modular redundancy (TMR) --- radiation hardening by design --- TMR --- FMR --- 4MR --- triplex–duplex --- FPGA-based digital controller --- radiation tolerant --- single event effects --- proton irradiation --- RFIC --- SEE testing --- space application --- CMOS --- TDC --- radiation effects --- total ionizing dose (TID) --- single-shot --- PLL --- ring oscillator --- analog single-event transient (ASET) --- bandgap voltage reference (BGR) --- CMOS analog integrated circuits --- gamma-rays --- heavy-ions --- ionization --- protons --- radiation hardening by design (RHBD) --- reference circuits --- single-event effects (SEE) --- space electronics --- total ionization dose (TID) --- voltage reference --- X-rays --- radiation-hardened --- single event gate rupture (SEGR) --- SEB --- power MOSFETs --- Single-Event Upsets (SEUs) --- radiation effects --- Ring Oscillators --- Impulse Sensitive Function --- Radiation Hardening by Design --- fault tolerance --- single event upset --- proton irradiation effects --- neutron irradiation effects --- soft errors --- saturation effect --- gain degradation --- total ionizing dose --- gamma ray --- bipolar transistor --- single event transient (SET) --- single event opset (SEU) --- radiation-hardening-by-design (RHBD) --- frequency synthesizers --- voltage controlled oscillator (VCO) --- frequency divider by two --- CMOS --- n/a

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MDPI - Multidisciplinary Digital Publishing Institute (2)


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CC by-nc-nd (2)


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eng (2)


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2019 (2)