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Resonant Behaviour of Pulse Generators for the Efficient Drive of Optical Radiation Sources Based on Dielectric Barrier Discharges

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ISBN: 9783731500834 Year: Pages: 212 p. DOI: 10.5445/KSP/1000036098 Language: ENGLISH
Publisher: KIT Scientific Publishing
Subject: Technology (General)
Added to DOAB on : 2019-07-30 20:02:02
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Dielectric barrier discharge (DBD) excimer lamps emit vacuum-UV optical radiation. This work presents novel methods for efficiently operating DBDs with short, high-voltage pulses. Transformer-less systems utilising SiC power semiconductor switches are presented. Pulse frequencies of up to 3.1 MHz and peak inverter efficiencies of 92 % were achieved. The work encloses both mathematical backgrounds of pulsed resonant circuits and practical implementation of low-inductive power stages.

Effiziente MHz-Wechselrichter mit unipolaren SiC-Transistoren für Hochleistungs-Induktionslampen

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ISBN: 9783731505457 Year: Pages: VII, 231 p. DOI: 10.5445/KSP/1000055999 Language: GERMAN
Publisher: KIT Scientific Publishing
Subject: Technology (General)
Added to DOAB on : 2019-07-30 20:01:57
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This work presents the design and investigation of a novel UV-lamp-system, which is based upon UV-induction lamps and a MHz-inverter equipped with normally-on junction field effect transistors (JFET). A system efficiency of some more than 27 % is verified with the prototype UV-induction lamp system, which positions between the two previous UV-systems and open up new fields of application.

Silicon-Based Nanomaterials: Technology and Applications

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ISBN: 9783039210428 9783039210435 Year: Pages: 94 DOI: 10.3390/books978-3-03921-043-5 Language: English
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-06-26 08:44:06
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Silicon has been proven to be remarkably resilient as a commercial electronic material. The microelectronics industry has harnessed nanotechnology to continually push the performance limits of silicon devices and integrated circuits. Rather than shrinking its market share, silicon is displacing “competitor” semiconductors in domains such as high-frequency electronics and integrated photonics. There are strong business drivers underlying these trends; however, an important contribution is also being made by research groups worldwide, who are developing new configurations, designs, and applications of silicon-based nanoscale and nanostructured materials. This Special Issue features a selection of papers which illustrate recent advances in the preparation of chemically or physically engineered silicon-based nanostructures and their application in electronic, photonic, and mechanical systems.

Advances in Wood Composites

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ISBN: 9783039285846 / 9783039285853 Year: Pages: 210 DOI: 10.3390/books978-3-03928-585-3 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2020-06-09 16:38:57
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Wood composites have shown very good performance, and substantial service lives when correctly specified for the exposure risks present. Selection of an appropriate product for the job should be accompanied by decisions about the appropriate protection, whether this is by design, by preservative treatment or by wood modification techniques. This Special Issue, Advances in Wood Composites presents recent progress in enhancing and refining the performance and properties of wood composites by chemical and thermal modification and the application of smart nanomaterials, which have made them a particular area of interest for researchers. In addition, it reviews some important aspects in the field of wood composites, with particular focus on their materials, applications, and engineering and scientific advances, including solutions inspired biomimetrically by the structure of wood and wood composites. This Special Issue, with a collection of 13 original contributions, provides selected examples of recent Advances in Wood Composites

Keywords

wood --- thermal modification --- mechanical properties --- dimensional stability --- color --- chemical structure --- VOCs --- alder plywood --- high-density polyethylene film --- bending strength --- modulus of elasticity in bending --- shear strength --- thickness swelling --- water absorption --- activation volume --- creep behavior --- sol-gel process --- stepped isostress method --- wood-inorganic composites --- wood adhesive --- tunnel-structured --- sepiolite --- rapid formaldehyde release --- wood plastic composite --- graphene nano-platelets --- thermal property --- mechanical property --- water-based UV curing coating --- coating amount --- surface properties --- polyurethane-acrylate --- oak (Quercus alba L.) --- bamboo --- carbothermal reduction --- ceramic --- silicon carbide --- sol–gel process --- thermal modification --- nanocompounds --- mechanical and physical properties --- cellulose --- crystallinity --- biorefinery lignin --- wood panels --- sustainable adhesives --- adhesive penetration --- particleboard properties --- formaldehyde emissions --- bamboo --- chemical modification --- dimensional stability --- dynamic thermodynamic --- acetic anhydride --- methyl methacrylate --- polymer-triticale boards --- thermoplastic polymers --- straw --- hydrophobicity --- mechanical properties --- oriented strand lumber (OSL) --- nanowollastonite --- mechanical and physical properties --- UF resin --- buckling --- WPC --- HDPE --- Southwell’s method --- finite element analysis --- Abaqus --- aquacultural --- structural analysis --- wood --- plastic --- composite --- n/a

Neural Microelectrodes: Design and Applications

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ISBN: 9783039213191 9783039213207 Year: Pages: 378 DOI: 10.3390/books978-3-03921-320-7 Language: English
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-12-09 11:49:15
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Neural electrodes enable the recording and stimulation of bioelectrical activity in the nervous system. This technology provides neuroscientists with the means to probe the functionality of neural circuitry in both health and disease. In addition, neural electrodes can deliver therapeutic stimulation for the relief of debilitating symptoms associated with neurological disorders such as Parkinson’s disease and may serve as the basis for the restoration of sensory perception through peripheral nerve and brain regions after disease or injury. Lastly, microscale neural electrodes recording signals associated with volitional movement in paralyzed individuals can be decoded for controlling external devices and prosthetic limbs or driving the stimulation of paralyzed muscles for functional movements. In spite of the promise of neural electrodes for a range of applications, chronic performance remains a goal for long-term basic science studies, as well as clinical applications. New perspectives and opportunities from fields including tissue biomechanics, materials science, and biological mechanisms of inflammation and neurodegeneration are critical to advances in neural electrode technology. This Special Issue will address the state-of-the-art knowledge and emerging opportunities for the development and demonstration of advanced neural electrodes.

Keywords

neural interface --- silicon carbide --- robust microelectrode --- microelectrode array --- liquid crystal elastomer --- neuronal recordings --- neural interfacing --- micro-electromechanical systems (MEMS) technologies --- microelectromechanical systems --- neuroscientific research --- magnetic coupling --- freely-behaving --- microelectrodes --- in vivo electrophysiology --- neural interfaces --- enteric nervous system --- conscious recording --- electrode implantation --- intracranial electrodes --- foreign body reaction --- electrode degradation --- glial encapsulation --- electrode array --- microelectrodes --- neural recording --- silicon probe --- three-dimensional --- electroless plating --- intracortical implant --- microelectrodes --- stiffness --- immunohistochemistry --- immune response --- neural interface response --- neural interface --- micromachine --- neuroscience --- biocompatibility --- training --- education --- diversity --- bias --- BRAIN Initiative --- multi-disciplinary --- micro-electromechanical systems (MEMS) --- n/a --- silicon neural probes --- LED chip --- thermoresistance --- temperature monitoring --- optogenetics --- microfluidic device --- chronic implantation --- gene modification --- neural recording --- neural amplifier --- microelectrode array --- intracortical --- sensor interface --- windowed integration sampling --- mixed-signal feedback --- multiplexing --- amorphous silicon carbide --- neural stimulation and recording --- insertion force --- microelectrodes --- neural interfaces --- intracortical --- microelectrodes --- shape-memory-polymer --- electrophysiology --- electrode --- artifact --- electrophysiology --- electrochemistry --- fast-scan cyclic voltammetry (FSCV) --- neurotechnology --- neural interface --- neuromodulation --- neuroprosthetics --- brain-machine interfaces --- intracortical implant --- microelectrodes --- softening --- immunohistochemistry --- immune response --- neural interface --- shape memory polymer --- deep brain stimulation --- fast scan cyclic voltammetry --- dopamine --- glassy carbon electrode --- magnetic resonance imaging --- system-on-chip --- neuromodulation --- bidirectional --- closed-loop --- sciatic nerve --- vagus nerve --- precision medicine --- neural probe --- intracortical --- microelectrodes --- bio-inspired --- polymer nanocomposite --- cellulose nanocrystals --- photolithography --- Parylene C --- impedance --- Utah electrode arrays --- electrode–tissue interface --- peripheral nerves --- wireless --- implantable --- microstimulators --- neuromodulation --- peripheral nerve stimulation --- neural prostheses --- microelectrode --- neural interfaces --- dextran --- neural probe --- microfabrication --- foreign body reaction --- immunohistochemistry --- polymer --- chronic --- electrocorticography --- ECoG --- micro-electrocorticography --- µECoG --- neural electrode array --- neural interfaces --- electrophysiology --- brain–computer interface --- in vivo imaging --- tissue response --- graphene --- n/a

Wide Bandgap Semiconductor Based Micro/Nano Devices

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ISBN: 9783038978428 9783038978435 Year: Pages: 138 DOI: 10.3390/books978-3-03897-843-5 Language: English
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering --- Electrical and Nuclear Engineering
Added to DOAB on : 2019-08-28 11:21:27
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While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.

Keywords

optical band gap --- tungsten trioxide film --- annealing temperature --- electrochromism --- AlGaN/GaN HEMT --- DIBL effect --- channel length modulation --- power amplifier --- W band --- high electron mobility transistors --- high electron mobility transistor (HEMT) --- AlGaN/GaN --- ohmic contact --- regrown contact --- ammonothermal GaN --- power amplifier --- I–V kink effect --- AlGaN/GaN HEMT --- large signal performance --- 4H-SiC --- MESFET --- ultrahigh upper gate height --- power added efficiency --- harsh environment --- space application --- 1T DRAM --- wide-bandgap semiconductor --- high-temperature operation --- TCAD --- amorphous InGaZnO (a-IGZO) --- thin-film transistor (TFT) --- positive gate bias stress (PGBS) --- passivation layer --- characteristic length --- edge termination --- silicon carbide (SiC) --- junction termination extension (JTE) --- breakdown voltage (BV) --- Ku-band --- GaN high electron mobility transistor (HEMT) --- power amplifier --- asymmetric power combining --- amplitude balance --- phase balance --- micron-sized patterned sapphire substrate --- growth of GaN --- sidewall GaN --- flip-chip light-emitting diodes --- distributed Bragg reflector --- light output power --- external quantum efficiency --- threshold voltage (Vth) stability --- gallium nitride (GaN) --- high electron mobility transistors (HEMTs) --- analytical model --- high-temperature operation --- T-anode --- GaN --- buffer layer --- anode field plate (AFP) --- cathode field plate (CFP) --- n/a

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