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Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.

physical unclonable function --- FPGA --- total ionizing dose --- Co-60 gamma radiation --- ring-oscillator --- Image processing --- line buffer --- SRAM-based FPGA --- single event upset (SEU) --- configuration memory --- soft error --- radiation-hardened --- instrumentation amplifier --- sensor readout IC --- total ionizing dose --- nuclear fusion --- radiation hardening --- hardening by design --- TMR --- selective hardening --- VHDL --- FPGA --- radiation hardening --- single event upsets --- heavy ions --- error rates --- single-event upsets (SEUs) --- digital integrated circuits --- triple modular redundancy (TMR) --- radiation hardening by design --- TMR --- FMR --- 4MR --- triplex–duplex --- FPGA-based digital controller --- radiation tolerant --- single event effects --- proton irradiation --- RFIC --- SEE testing --- space application --- CMOS --- TDC --- radiation effects --- total ionizing dose (TID) --- single-shot --- PLL --- ring oscillator --- analog single-event transient (ASET) --- bandgap voltage reference (BGR) --- CMOS analog integrated circuits --- gamma-rays --- heavy-ions --- ionization --- protons --- radiation hardening by design (RHBD) --- reference circuits --- single-event effects (SEE) --- space electronics --- total ionization dose (TID) --- voltage reference --- X-rays --- radiation-hardened --- single event gate rupture (SEGR) --- SEB --- power MOSFETs --- Single-Event Upsets (SEUs) --- radiation effects --- Ring Oscillators --- Impulse Sensitive Function --- Radiation Hardening by Design --- fault tolerance --- single event upset --- proton irradiation effects --- neutron irradiation effects --- soft errors --- saturation effect --- gain degradation --- total ionizing dose --- gamma ray --- bipolar transistor --- single event transient (SET) --- single event opset (SEU) --- radiation-hardening-by-design (RHBD) --- frequency synthesizers --- voltage controlled oscillator (VCO) --- frequency divider by two --- CMOS --- n/a