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Wide Bandgap Semiconductor Based Micro/Nano Devices

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ISBN: 9783038978428 9783038978435 Year: Pages: 138 DOI: 10.3390/books978-3-03897-843-5 Language: English
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering --- Electrical and Nuclear Engineering
Added to DOAB on : 2019-08-28 11:21:27
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Abstract

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.

Keywords

optical band gap --- tungsten trioxide film --- annealing temperature --- electrochromism --- AlGaN/GaN HEMT --- DIBL effect --- channel length modulation --- power amplifier --- W band --- high electron mobility transistors --- high electron mobility transistor (HEMT) --- AlGaN/GaN --- ohmic contact --- regrown contact --- ammonothermal GaN --- power amplifier --- I–V kink effect --- AlGaN/GaN HEMT --- large signal performance --- 4H-SiC --- MESFET --- ultrahigh upper gate height --- power added efficiency --- harsh environment --- space application --- 1T DRAM --- wide-bandgap semiconductor --- high-temperature operation --- TCAD --- amorphous InGaZnO (a-IGZO) --- thin-film transistor (TFT) --- positive gate bias stress (PGBS) --- passivation layer --- characteristic length --- edge termination --- silicon carbide (SiC) --- junction termination extension (JTE) --- breakdown voltage (BV) --- Ku-band --- GaN high electron mobility transistor (HEMT) --- power amplifier --- asymmetric power combining --- amplitude balance --- phase balance --- micron-sized patterned sapphire substrate --- growth of GaN --- sidewall GaN --- flip-chip light-emitting diodes --- distributed Bragg reflector --- light output power --- external quantum efficiency --- threshold voltage (Vth) stability --- gallium nitride (GaN) --- high electron mobility transistors (HEMTs) --- analytical model --- high-temperature operation --- T-anode --- GaN --- buffer layer --- anode field plate (AFP) --- cathode field plate (CFP) --- n/a

Optoelectronic Nanodevices

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ISBN: 9783039286966 / 9783039286973 Year: Pages: 338 DOI: 10.3390/books978-3-03928-697-3 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2020-06-09 16:38:57
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During the last decade, novel graphene related materials (GRMs), perovskites, as well as metal oxides and other metal nanostructures have received the interest of the scientific community. Due to their extraordinary physical, optical, thermal, and electrical properties, which are correlated with their 2D ultrathin atomic layer structure, large interlayer distance, ease of functionalization, and bandgap tunability, these nanomaterials have been applied in the development or the improvement of innovative optoelectronic applications, as well as the expansion of theoretical studies and simulations in the fast-growing fields of energy (photovoltaics, energy storage, fuel cells, hydrogen storage, catalysis, etc.), electronics, photonics, spintronics, and sensing devices. The continuous nanostructure-based applications development has provided the ability to significantly improve existing products and to explore the design of materials and devices with novel functionalities. This book demonstrates some of the most recent trends and advances in the interdisciplinary field of optoelectronics. Most articles focus on light emitting diodes (LEDs) and solar cells (SCs), including organic, inorganic, and hybrid configurations, whereas the rest address photodetectors, transistors, and other well-known dynamic optoelectronic devices. In this context, this exceptional collection of articles is directed at a broad scientific audience of chemists, materials scientists, physicists, and engineers, with the goals of highlighting the potential of innovative optoelectronic applications incorporating nanostructures and inspiring their realization.

Keywords

localized surface plasmon --- green LED --- cathodoluminescence --- FDTD --- NiCo2S4 nanotubes --- Ti porous film --- quantum dot --- solar cells --- counter electrode --- metasurfaces --- orthogonal polarization --- high-efficiency --- polarization analyzer --- green LEDs --- InGaN/GaN superlattice --- V-pits --- external quantum efficiency --- PeLEDs --- OAB --- perovskite --- quantum confinement effect --- transparent electrode --- Ag film --- nucleation layer --- organic solar cell --- graphene oxide --- oxidation --- photodetector --- light-emitting diodes --- quantum dots --- stability --- color-conversion efficiency --- photoluminescence --- p-type InGaN --- graded indium composition --- hole injection --- quantum efficiency --- green LED --- 2D perovskite --- controllable synthesis --- flexible substrate --- photodetector --- photoelectric performance --- photodetector --- organic --- photomultiplication --- tunneling --- external quantum efficiency --- liquid crystals --- metasurfaces --- plasmonics --- actively tunable nanodevices --- solvent --- compact --- smooth --- perovskite solar cells --- indium nanoparticles (In NPs) --- textured silicon solar cells --- antireflective coating (ARC) --- plasmonic forward scattering --- InN/p-GaN heterojunction --- interface --- photovoltaics --- GaN --- LED --- nano-grating --- metamaterials --- mid infrared --- graphene split-ring --- gold split-ring --- electromagnetically induced transparency effect --- transparent conductive electrode --- Ga2O3 --- AlGaN-based ultraviolet light-emitting diode --- transmittance --- sheet resistance --- electrowetting --- tunable absorbers --- subwavelength metal grating --- plasmon resonance --- field emission --- graphene --- reduced graphene oxide --- polymer composites --- graphene ink --- cold cathode --- Fowler–Nordheim --- CdTe microdots --- Schottky barrier --- photodetector --- piezo-phototronic effect --- UV LEDs --- double-layer ITO --- pinhole pattern --- current spreading --- light output power --- flip-chip mini-LED --- prism-structured sidewall --- waveguide photons --- light extraction --- erbium --- silicon transistor --- photocurrent --- colorimetry --- excitation wavelength --- light-emitting diode --- quantum dots --- ternary organic solar cells --- graphene ink --- functionalization --- air-processed --- cascade effect --- charge transfer --- n/a

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MDPI - Multidisciplinary Digital Publishing Institute (2)


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2020 (1)

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