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Development of CMOS-MEMS/NEMS Devices

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ISBN: 9783039210688 / 9783039210695 Year: Pages: 165 DOI: 10.3390/books978-3-03921-069-5 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-06-26 08:44:07
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Abstract

Micro and nano-electro-mechanical system (M/NEMS) devices constitute key technological building blocks to enable increased additional functionalities within Integrated Circuits (ICs) in the More-Than-Moore era, as described in the International Technology Roadmap for Semiconductors. The CMOS ICs and M/NEMS dies can be combined in the same package (SiP), or integrated within a single chip (SoC). In the SoC approach the M/NEMS devices are monolithically integrated together with CMOS circuitry allowing the development of compact and low-cost CMOS-M/NEMS devices for multiple applications (physical sensors, chemical sensors, biosensors, actuators, energy actuators, filters, mechanical relays, and others). On-chip CMOS electronics integration can overcome limitations related to the extremely low-level signals in sub-micrometer and nanometer scale electromechanical transducers enabling novel breakthrough applications. This Special Issue aims to gather high quality research contributions dealing with MEMS and NEMS devices monolithically integrated with CMOS, independently of the final application and fabrication approach adopted (MEMS-first, interleaved MEMS, MEMS-last or others).]

Radiation Tolerant Electronics

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ISBN: 9783039212798 / 9783039212804 Year: Pages: 210 DOI: 10.3390/books978-3-03921-280-4 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering --- Electrical and Nuclear Engineering
Added to DOAB on : 2019-12-09 11:49:15
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Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.

Keywords

physical unclonable function --- FPGA --- total ionizing dose --- Co-60 gamma radiation --- ring-oscillator --- Image processing --- line buffer --- SRAM-based FPGA --- single event upset (SEU) --- configuration memory --- soft error --- radiation-hardened --- instrumentation amplifier --- sensor readout IC --- total ionizing dose --- nuclear fusion --- radiation hardening --- hardening by design --- TMR --- selective hardening --- VHDL --- FPGA --- radiation hardening --- single event upsets --- heavy ions --- error rates --- single-event upsets (SEUs) --- digital integrated circuits --- triple modular redundancy (TMR) --- radiation hardening by design --- TMR --- FMR --- 4MR --- triplex–duplex --- FPGA-based digital controller --- radiation tolerant --- single event effects --- proton irradiation --- RFIC --- SEE testing --- space application --- CMOS --- TDC --- radiation effects --- total ionizing dose (TID) --- single-shot --- PLL --- ring oscillator --- analog single-event transient (ASET) --- bandgap voltage reference (BGR) --- CMOS analog integrated circuits --- gamma-rays --- heavy-ions --- ionization --- protons --- radiation hardening by design (RHBD) --- reference circuits --- single-event effects (SEE) --- space electronics --- total ionization dose (TID) --- voltage reference --- X-rays --- radiation-hardened --- single event gate rupture (SEGR) --- SEB --- power MOSFETs --- Single-Event Upsets (SEUs) --- radiation effects --- Ring Oscillators --- Impulse Sensitive Function --- Radiation Hardening by Design --- fault tolerance --- single event upset --- proton irradiation effects --- neutron irradiation effects --- soft errors --- saturation effect --- gain degradation --- total ionizing dose --- gamma ray --- bipolar transistor --- single event transient (SET) --- single event opset (SEU) --- radiation-hardening-by-design (RHBD) --- frequency synthesizers --- voltage controlled oscillator (VCO) --- frequency divider by two --- CMOS --- n/a

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MDPI - Multidisciplinary Digital Publishing Institute (2)


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2019 (2)