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Sobranie sočinenij. Teil 3: Dvenadcat' Dram

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Book Series: Slavistische Beitraege ISBN: 9783876907758 Year: Pages: 374 DOI: 10.3726/b12640 Language: German
Publisher: Peter Lang International Academic Publishing Group
Subject: Languages and Literatures
Added to DOAB on : 2019-01-15 13:31:36
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Abstract

In the present third volume of the edition of works of the Russian symbolist Fedor Sologub (1863-1927) twelve of his dramas are reprinted, some of them again for the first time after eighty to one hundred years.

Emerging Memory and Computing Devices in the Era of Intelligent Machines

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ISBN: 9783039285020 / 9783039285037 Year: Pages: 276 DOI: 10.3390/books978-3-03928-503-7 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2020-06-09 16:38:57
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Computing systems are undergoing a transformation from logic-centric towards memory-centric architectures, where overall performance and energy efficiency at the system level are determined by the density, performance, functionality and efficiency of the memory, rather than the logic sub-system.

Keywords

3D-stacked --- DRAM --- in-DRAM cache --- low-latency --- low-power --- resistive memory --- crossbar --- in-memory computing --- analogue computing --- matrix-vector multiplication --- ECG --- voltage-controlled magnetic anisotropy --- magnetoresistive random access memory --- magnetic tunnel junction --- bioelectronic devices --- bionanohybrid material --- biomemory --- biologic gate --- bioprocessor --- protein --- nucleic acid --- nanoparticles --- SONOS --- flash memory --- charge spreading --- plasma treatment --- Oxygen-related trap --- data retention --- BCH --- decoder --- iBM --- GPU --- hybrid --- flash memory --- Galois field --- CUDA --- in-memory computing --- logic-in-memory --- non-von Neumann architecture --- configurable logic-in-memory architecture --- memory wall --- convolutional neural networks --- emerging technologies --- perpendicular Nano Magnetic Logic (pNML) --- silicon oxide-based memristors --- resistance switching mechanism --- variability --- conductive filament --- Weibull distribution --- quantum point contact --- real-time system --- dynamic voltage scaling --- task placement --- low-power technique --- nonvolatile memory --- neuromorphic system --- Hebbian training --- guide training --- memristor --- image classification --- STT-MRAM --- flip-flop --- power gating --- low-power --- bipolar resistive switching characteristics --- annealing temperatures --- solution-based dielectric --- resistive random access memory (RRAM) --- multi-level cell --- phase change memory --- programmable ramp-down current pulses --- Fast Fourier Transform --- in-memory computing --- associative processor --- non-von neumann architecture --- in-memory computing --- memristor --- RISC-V --- Internet of things --- blockchain --- U-shape recessed channel --- floating gate --- neuromorphic computing --- MCU (microprogrammed control unit) --- chalcogenide --- electrochemical metallization cell --- electrochemical metallization (ECM) --- ion conduction --- memristor --- self-directed channel (SDC) --- memristor --- crossbar array --- wire resistance --- synaptic weight --- character recognition --- n/a

Wide Bandgap Semiconductor Based Micro/Nano Devices

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ISBN: 9783038978428 9783038978435 Year: Pages: 138 DOI: 10.3390/books978-3-03897-843-5 Language: English
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering --- Electrical and Nuclear Engineering
Added to DOAB on : 2019-08-28 11:21:27
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Abstract

While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.

Keywords

optical band gap --- tungsten trioxide film --- annealing temperature --- electrochromism --- AlGaN/GaN HEMT --- DIBL effect --- channel length modulation --- power amplifier --- W band --- high electron mobility transistors --- high electron mobility transistor (HEMT) --- AlGaN/GaN --- ohmic contact --- regrown contact --- ammonothermal GaN --- power amplifier --- I–V kink effect --- AlGaN/GaN HEMT --- large signal performance --- 4H-SiC --- MESFET --- ultrahigh upper gate height --- power added efficiency --- harsh environment --- space application --- 1T DRAM --- wide-bandgap semiconductor --- high-temperature operation --- TCAD --- amorphous InGaZnO (a-IGZO) --- thin-film transistor (TFT) --- positive gate bias stress (PGBS) --- passivation layer --- characteristic length --- edge termination --- silicon carbide (SiC) --- junction termination extension (JTE) --- breakdown voltage (BV) --- Ku-band --- GaN high electron mobility transistor (HEMT) --- power amplifier --- asymmetric power combining --- amplitude balance --- phase balance --- micron-sized patterned sapphire substrate --- growth of GaN --- sidewall GaN --- flip-chip light-emitting diodes --- distributed Bragg reflector --- light output power --- external quantum efficiency --- threshold voltage (Vth) stability --- gallium nitride (GaN) --- high electron mobility transistors (HEMTs) --- analytical model --- high-temperature operation --- T-anode --- GaN --- buffer layer --- anode field plate (AFP) --- cathode field plate (CFP) --- n/a

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