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Strain-Engineered MOSFETs

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ISBN: 9781466500556 9781138075603 Year: Language: English
Publisher: CRC Press Grant: Knowledge Unlatched - 102701
Subject: Agriculture (General)
Added to DOAB on : 2020-02-20 11:21:03
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Abstract

This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.

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